Comparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETs

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part...

comparison of catalytic activity of heteropoly compounds in the synthesis of bis(indolyl)alkanes.

heteropoly acids (hpa) and their salts have advantages as catalysts which make them both economically and environmentally attractive, strong br?nsted acidity, exhibiting fast reversible multi-electron redox transformations under rather mild conditions, very high solubility in polar solvents, fairly high thermal stability in the solid states, and efficient oxidizing ability, so that they are imp...

comparison of the amount of debris extruded apically in two rotary techniques: flexmaster and m2

چکیده ندارد.

Energy Position of the Active Near-Interface Traps in Metal–Oxide– Semiconductor Field-Effect Transistors on 4H–SiC

Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps

We utilize the recently suggested capture-emission-time (CET) maps [1] for the first time for SiC technologies. CET maps are a very powerful characterization technique which allow the elegant and comprehensive analysis of oxide/interface traps at or near the semiconductor-dielectric interface and were originally developed to characterize degradation of Si based MOSFETs. For asprocessed SiC MOSF...